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IR370SG08HCB

Part Number	IR370SG08HCB
Manufacturer	International Rectifier
Description	Phase Control Thyristors
Published	Feb 24, 2017
Detailed Description	Preliminary Data Sheet I0212J 12/99 PHASE CONTROL THYRISTORS IR370SG..HCB Junction Size: Square 370 mils Wafer Size...
Datasheet	IR370SG08HCB PDF File

Overview

Preliminary Data Sheet I0212J 12/99 PHASE CONTROL THYRISTORS IR370SG.
.
HCB Junction Size: Square 370 mils Wafer Size: 4" VRRM Class: Passivation Process: 600 to 1200 V Glassivated MESA Reference IR Packaged Part: 50RIA Series Major Ratings and Characteristics Parameters Units Test Conditions VTM Maximum On-state Voltage 1.
2 V TJ= 25°C, IT = 25 A VDRM/VRRM Direct and Reverse Breakdown Voltage 600 to 1200 V TJ = 25°C, IDRM /IRRM = 100 µA (1) IGT Max.
Required DC Gate Current to Trigger 150 mA TJ= 25° C, anode supply = 6 V, resistive load VGT Max.
Required DC Gate Voltage to Trigger 2 V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range 5 to 200 mA Anode supply = 6 V, resistive load IL MaximumLatchingCurrent (1) Nitrogen flow on die edge.
400mA Anode supply = 6 V, resistive load Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Ma...

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IR370SG08HCB Phase Control Thyristors - International Rectifier

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