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IMD10AMT1G

Part Number	IMD10AMT1G
Manufacturer	ON Semiconductor
Description	Dual Bias Resistor Transistor
Published	Feb 28, 2017
Detailed Description	IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Ne...
Datasheet	IMD10AMT1G PDF File

Overview

IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network • High Current: IC = 500 mA max • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO Collector−Emitter Voltage V(BR)CEO Emitter−Base Voltage V(BR)EBO Collector Current − Continuous IC THERMAL CHARACTERISTICS 50 50 5.
0 500 Vdc Vdc Vdc mAdc Characteristic Symbol Max Unit Power Dissipation* PD 285 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
*Total for both Transistors.
http://onsemi.
com (3) (2) (1) Q2 (4) R1 Q1 R2 R1 (5) SC−74 (6) MARKING DIAGRAM 6 1 SC−74R 318AA Style 21 D10 M G D10 = Specific Device C...

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IMD10AMT1G Dual Bias Resistor Transistor - ON Semiconductor

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