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SSIG20N135H

Silikron Semiconductor
Part Number SSIG20N135H
Manufacturer Silikron Semiconductor
Description MOSFET
Published Feb 28, 2017
Detailed Description Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100°C Features and Benefits:  Advanced...
Datasheet PDF File SSIG20N135H PDF File

SSIG20N135H
SSIG20N135H

Overview
Main Product Characteristics: VCES 1350V VCE(sat) 1.
9V (typ.
) ID 20A @ TC = 100°C Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.
9V@20A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Cooker TO-247 SSIG20N135H Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application of induction cooker and a wide variety of other applications.
Absolute max Rating: Symbol IC @ TC = 25°C IC @ TC = 100°C ICM PD @TC = 25°C VCES VGES TJ TSTG TL Parameter Continuous Collector Current Continuous Collector Current Pulsed Collector Current Power Dissipation@ TC = 25°C Power Dissipation@ TC = 100°C Collector-Emitter Voltage Gate-to-Emitter Voltage Operating J...


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