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MT6L58AT

Toshiba Semiconductor
Part Number MT6L58AT
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Mar 2, 2017
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications ...
Datasheet PDF File MT6L58AT PDF File

MT6L58AT
MT6L58AT

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications • Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6 Mounted Devices Three-pins (SSM/TESM) mold products are corresponded.
Q1: SSM (TESM) MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S03AS (MT3S03AT) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Marking Q1 Q2 10 10 55 1.
5 2 15 40 7 10 150 125 −55~125 Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2JA1C Weight: 0.
0045 g (typ.
) Pin Assignment (top view) 1 2003-09-19 MT6L58AT Electrical Characteristics Q1 (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gai...


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