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HMC455LP3E

Analog Devices
Part Number HMC455LP3E
Manufacturer Analog Devices
Description InGaP HBT
Published Mar 5, 2017
Detailed Description v02.0605 HMC455LP3 / 455LP3E InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 11 Typical Applications This amplifie...
Datasheet PDF File HMC455LP3E PDF File

HMC455LP3E
HMC455LP3E

Overview
v02.
0605 HMC455LP3 / 455LP3E InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.
7 - 2.
5 GHz 11 Typical Applications This amplifier is ideal for high linearity applications: • Multi-Carrier Systems • GSM, GPRS & EDGE • CDMA & WCDMA • PHS Functional Diagram Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.
7 and 2.
5 GHz.
Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage.
The high output IP3 of +42 dBm coupled with the low VSWR of 1.
4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures.
A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier.
The LP3 provides an ex...


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