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HMC408LP3E

Analog Devices
Part Number HMC408LP3E
Manufacturer Analog Devices
Description GaAs InGaP HBT MMIC 1WATT POWER AMPLIFIER
Published Mar 5, 2017
Detailed Description v03.0705 11 Typical Applications The HMC408LP3 / HMC408LP3E is ideal for: • 802.11a & HiperLAN WLAN • UNII & Point-to-...
Datasheet PDF File HMC408LP3E PDF File

HMC408LP3E
HMC408LP3E

Overview
v03.
0705 11 Typical Applications The HMC408LP3 / HMC408LP3E is ideal for: • 802.
11a & HiperLAN WLAN • UNII & Point-to-Point / Multi-Point Radios • Access Point Radios Functional Diagram HMC408LP3 / 408LP3E GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.
1 - 5.
9 GHz Features Gain: 20 dB Saturated Power: +32.
5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General Description The HMC408LP3 & HMC408LP3E are 5.
1 - 5.
9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB.
The amplifier provides 20 dB of gain, +32.
5 dBm of saturated power, and 27% PAE from a +5V supply voltage.
The input is internally matched to 50 Ohms while the output requires a minimum of external components.
Vpd can be used for full power down or RF output power/current control.
The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performa...


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