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CMN3100

Cmos
Part Number CMN3100
Manufacturer Cmos
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 7, 2017
Detailed Description CMN3100 N-Channel Enhancement Mode Field Effect Transistor General Description The CMN3100 uses advanced trench techno...
Datasheet PDF File CMN3100 PDF File

CMN3100
CMN3100

Overview
CMN3100 N-Channel Enhancement Mode Field Effect Transistor General Description The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Features RDS(ON)<14mΩ @ VGS=10V RDS(ON)<16mΩ @ VGS=4.
5V Simple drive requirement Surface mount package Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 14m ID 8A Applications PWM applications Load switch Power management PA Switch SOT-23 Pin Configuration D S G SOT-23 (CMN3100) G D ● ◀▲ ● ● S Symbol VDS VGS ID IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 20 8 20 1.
4 -55 to 150 150 Units V V A A W Thermal Data Symbol R JA Parameter Thermal Resistance Junction-ambient (Steady State) Typ.
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