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HMC349AMS8G

Part Number	HMC349AMS8G
Manufacturer	Analog Devices
Description	SPDT Switch
Published	Mar 7, 2017
Detailed Description	Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G FEATURES Nonreflective, 50 Ω ...
Datasheet	HMC349AMS8G PDF File

Overview

Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G FEATURES Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.
9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.
5 dBm through path 26.
5 dBm terminated path Single positive supply: 3 V to 5 V CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exposed pad (MINI_SO_EP) APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment GENERAL DESCRIPTION The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.
9 dB, high input IP3 of 52 dBm, and high input P1dB of ...

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