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MSN0675D

MORESEMI
Part Number MSN0675D
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Published Mar 13, 2017
Detailed Description MSN0675D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=...
Datasheet PDF File MSN0675D PDF File

MSN0675D
MSN0675D

Overview
MSN0675D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =75A RDS(ON) < 11.
5mΩ @ VGS=10V (Typ:9.
1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply PIN Configuration Lead Free Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0675D MSN0675D TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current...


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