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S29GL256S

Cypress Semiconductor
Part Number S29GL256S
Manufacturer Cypress Semiconductor
Description 3.0V GL-S Flash Memory
Published Mar 13, 2017
Detailed Description S29GL01GS, S29GL512S S29GL256S, S29GL128S 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mby...
Datasheet PDF File S29GL256S PDF File

S29GL256S
S29GL256S

Overview
S29GL01GS, S29GL512S S29GL256S, S29GL128S 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.
0V GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology.
These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns.
They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics  CMOS 3.
0 Volt Core with Versatile I/O  65 nm MirrorBit Eclipse Technology  Single supply (VCC) for read / program / erase (2.
7V to 3.
6V)  Versatile I/O Feature – Wide I/O voltage range (VIO): 1.
65V to VCC  x16 dat...


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