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CY7C1393KV18

Part Number	CY7C1393KV18
Manufacturer	Cypress Semiconductor
Description	18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
Published	Mar 13, 2017
Detailed Description	CY7C1392KV18 CY7C1393KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture 18-Mbit DDR II SIO SRAM Two-Word Burst Ar...
Datasheet	CY7C1393KV18 PDF File

Overview

CY7C1392KV18 CY7C1393KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features ■ 18-Mbit density (2M × 8, 1M × 18) ■ 333-MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Synchronous internally self timed writes ■ DDR II operates with 1.
5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW ■ 1.
8 V core power supply with HSTL inputs and outputs ■ Variable drive HSTL output buffers ■ Expanded HSTL output voltage (1.
4 V–VDD) ❐ Supports both 1.
5 V and 1.
8 V I/O sup...

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CY7C1393KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture - Cypress Semiconductor

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