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CY7C1423KV18

Part Number	CY7C1423KV18
Manufacturer	Cypress Semiconductor
Description	36-Mbit DDR II SIO SRAM Two-Word Burst Architecture
Published	Mar 13, 2017
Detailed Description	CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Ar...
Datasheet	CY7C1423KV18 PDF File

Overview

CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features ■ 36-Mbit density (2M × 18, 1M × 36) ■ 333 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Synchronous internally self timed writes ■ DDR II operates with 1.
5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted LOW ■ 1.
8 V core power supply with HSTL inputs and outputs ■ Variable drive HSTL output buffers ■ Expanded HSTL output voltage (1.
4 V to VDD) ❐ Supports both 1.
5 V and 1.
8 V IO supp...

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CY7C1423KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture - Cypress Semiconductor

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