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CY7C1411KV18

Part Number	CY7C1411KV18
Manufacturer	Cypress Semiconductor
Description	36-Mbit QDR II SRAM Four-Word Burst Architecture
Published	Mar 14, 2017
Detailed Description	CY7C1411KV18/CY7C1426KV18 CY7C1413KV18/CY7C1415KV18 36-Mbit QDR® II SRAM Four-Word Burst Architecture 36-Mbit QDR® II S...
Datasheet	CY7C1411KV18 PDF File

Overview

CY7C1411KV18/CY7C1426KV18 CY7C1413KV18/CY7C1415KV18 36-Mbit QDR® II SRAM Four-Word Burst Architecture 36-Mbit QDR® II SRAM Four-Word Burst Architecture Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) Interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Single multiplexed address input bus latches address inputs for read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ QDR® II operates with 1.
5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to QDR I device...

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CY7C1411KV18 36-Mbit QDR II SRAM Four-Word Burst Architecture - Cypress Semiconductor

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