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CY7S1061GE

Cypress Semiconductor
Part Number CY7S1061GE
Manufacturer Cypress Semiconductor
Description 16-Mbit (1 M words x 16 bit) Static RAM
Published Mar 14, 2017
Detailed Description CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Sta...
Datasheet PDF File CY7S1061GE PDF File

CY7S1061GE
CY7S1061GE

Overview
CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Ultra-low power PowerSnooze™[1] device ❐ Deep Sleep (DS) current IDS = 22-µA maximum ■ Low active and standby currents ❐ ICC = 90-mA typical ❐ ISB2 = 20-mA typical ■ Wide operating voltage range: 1.
65 V to 2.
2 V, 2.
2 V to 3.
6 V, and 4.
5 V to 5.
5 V ■ Embedded error-correcting code (ECC) for single-bit error correction ■ 1.
0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages Functional Description The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits.
This device features fast access times (10 ns) and...


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