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FM1808B

Cypress Semiconductor
Part Number FM1808B
Manufacturer Cypress Semiconductor
Description 256-Kbit (32 K x 8) Bytewide F-RAM Memory
Published Mar 14, 2017
Detailed Description FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroel...
Datasheet PDF File FM1808B PDF File

FM1808B
FM1808B

Overview
FM1808B 256-Kbit (32 K × 8) Bytewide F-RAM Memory 256-Kbit (32 K × 8) Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ SRAM and EEPROM compatible ❐ Industry-standard 32 K × 8 SRAM and EEPROM pinout ❐ 70-ns access time, 130-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ❐ Resistant to negative voltage undershoots ■ Low power consumption ❐ Active current 15 mA (max) ❐ Standby current 25 A (typ) ■ Voltage operation: VDD = 4.
5 V to 5.
5 V ■ Industrial temperature: –40 C to +85 C ■ 28-pin small outline integrated circuit (SOIC) packag...


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