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DMN10H170SVTQ

Diodes
Part Number DMN10H170SVTQ
Manufacturer Diodes
Description 100V N-CHANNEL MOSFET
Published Mar 15, 2017
Detailed Description ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA...
Datasheet PDF File DMN10H170SVTQ PDF File

DMN10H170SVTQ
DMN10H170SVTQ

Overview
ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.
5V ID Max TA = +25°C 2.
6A 2.
3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
DMN10H170SVTQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: TSOT26  Case Material: Molded Plastic, “Green” Molding Compound.
UL Fl...


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