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WFF7N65L

Winsemi
Part Number WFF7N65L
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFF7N65L Product Description Silicon N-Channel MOSFET Features � 7A,650V,RDS(on)(Max1.38Ω)@VGS=10V � Low Crss (typical ...
Datasheet PDF File WFF7N65L PDF File

WFF7N65L
WFF7N65L

Overview
WFF7N65L Product Description Silicon N-Channel MOSFET Features � 7A,650V,RDS(on)(Max1.
38Ω)@VGS=10V � Low Crss (typical 15pF ) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy ...


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