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DTC144EEFRA

ROHM
Part Number DTC144EEFRA
Manufacturer ROHM
Description Digital Transistor
Published Mar 22, 2017
Detailed Description DTC144EE FRA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified Param...
Datasheet PDF File DTC144EEFRA PDF File

DTC144EEFRA
DTC144EEFRA

Overview
DTC144EE FRA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified Parameter VCC IC(MAX.
) R1 R2 Value 50V 100mA 47kΩ 47kΩ lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of 　an inverter circuit without connecting external 　input resistors (see inner circuit) .
3) Only the on/off conditions need to be set 　for operation, making the circuit design easy.
4) Complementary PNP Types: DTA144EE FRA lOutline SOT-416 　 SC-75A 　 　 　 　 　 (EMT3) 　 　 　 　 　　　　　　　　 lInner circuit lApplication INVERTER, INTERFACE, DRIVER lPackaging specifications Part No.
Package Package size 　　　　　　　　　　　　　　　　　　　　　　 Taping code Reel size Tape width (mm) (mm) Basic ordering unit.
(pcs) Marking DTC144EE FRA SOT-416 1616 TL 180 8 (EMT3) 3000 26 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/5 20161024 - Rev.
001 DTC144EE FRA 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Output current Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol Values Unit VCC 50 V VIN -10 to 40 V IO 30 mA IC(MAX)*1 100 mA PD*2 150 mW Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 VCC = 5V, IO = 100μA VO = 0.
3V, IO = 2mA IO = 10mA, II = 0.
5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 5mA - Transition frequency f *1 T VCE = 10V, IE = -5mA, f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land.
Values Unit Min.
Typ.
Max.
- - 0.
5 V 3.
0 - - - 100 300 mV - - 180 μA - - 500 nA 68 - - - 32.
9 47 61.
1 kΩ ...


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