DatasheetsPDF.com

WFU20N06

Winsemi
Part Number WFU20N06
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 22, 2017
Detailed Description WFU20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC)...
Datasheet PDF File WFU20N06 PDF File

WFU20N06
WFU20N06

Overview
WFU20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.
1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FE T is produced using W in se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol Parameter V DSS Drain Source Voltage ID Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed tp=10us VGS Gate to Source Voltage-Continuous VGS Gate to Source Voltage-Non-Repetitive(tp<10us) EAS Single Pulsed Avalanche Energy Is Source Current (Body Diode) PD TJ, Tstg TL Total Power Dissipation(@Tc=25℃) Junction an...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)