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WFD4N60B

Winsemi
Part Number WFD4N60B
Manufacturer Winsemi
Description Power MOSFET
Published Mar 26, 2017
Detailed Description WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ F...
Datasheet PDF File WFD4N60B PDF File

WFD4N60B
WFD4N60B

Overview
WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.
RDS(on)(Max 2.
4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.
This devices is specially well Suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain...


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