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WFF15N60

Winsemi
Part Number WFF15N60
Manufacturer Winsemi
Description Power MOSFET
Published Mar 26, 2017
Detailed Description WFF15N60 Product Description Silicon N-Channel MOSFET Features � 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V � Ultra-low Gate c...
Datasheet PDF File WFF15N60 PDF File

WFF15N60
WFF15N60

Overview
WFF15N60 Product Description Silicon N-Channel MOSFET Features � 15A,600V, RDS(on)(Max0.
52Ω)@VGS=10V � Ultra-low Gate charge(Typical 36nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery ...


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