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SiHA21N65EF

Vishay
Part Number SiHA21N65EF
Manufacturer Vishay
Description E Series Power MOSFET
Published Mar 27, 2017
Detailed Description www.vishay.com SiHA21N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G...
Datasheet PDF File SiHA21N65EF PDF File

SiHA21N65EF
SiHA21N65EF

Overview
www.
vishay.
com SiHA21N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) max.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 106 14 33 Single 0.
18 FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power supplies (SMPS) • Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free Thin-Lead TO-220 FULLPAK SiHA21N65EF-E3 SiHA21N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) e Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d Soldering recommendations (peak temperature) c VGS at 10 V TC = 25 °C TC = 100 °C TJ = 125 °C for 10 s VDS VGS ID IDM EAS PD TJ, Tstg dV/dt Mounting torque M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature b.
VDD = 50 V, starting TJ = 25 °C, L = 28.
2 mH, Rg = 25 , IAS = 5.
1 A c.
1.
6 mm from case d.
ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C e.
Limited b...


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