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SiHH11N60E

Vishay
Part Number SiHH11N60E
Manufacturer Vishay
Description E Series Power MOSFET
Published Mar 27, 2017
Detailed Description www.vishay.com SiHH11N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate ...
Datasheet PDF File SiHH11N60E PDF File

SiHH11N60E
SiHH11N60E

Overview
www.
vishay.
com SiHH11N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) typ.
(Ω) at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 62 7 13 Single 0.
295 FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK 8 x 8 SiHH11N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt c TJ = 125 °C EAS PD TJ, Tstg dV/dt Notes a.
Repetitive rating; pulse width limited by maximum junction temperature b.
VDD = 140 V, starting TJ = 25 °C, L = 28.
2 mH, Rg = 25 Ω, IAS = 3 A c.
ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C LIMIT 600 ± 30 11 7 27 0.
9 127 114 -55 to +150 70 18 UNIT V A W/°C mJ W °C V/ns S23-0651-Rev.
B, 21-Aug-2023 1 Document Number: 91651 For technical questions, contact: hvm@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE...


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