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VS-16CDH02HM3

Vishay
Part Number VS-16CDH02HM3
Manufacturer Vishay
Description Hyperfast Rectifier
Published Mar 27, 2017
Detailed Description www.vishay.com VS-16CDH02HM3 Vishay Semiconductors Hyperfast Rectifier, 2 x 8 A FRED Pt® eSMP® Series SMPD (TO-263AC)...
Datasheet PDF File VS-16CDH02HM3 PDF File

VS-16CDH02HM3
VS-16CDH02HM3

Overview
www.
vishay.
com VS-16CDH02HM3 Vishay Semiconductors Hyperfast Rectifier, 2 x 8 A FRED Pt® eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 K Anode 2 Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2x8A VR 200 V VF at IF 0.
77 V trr TJ max.
27 ns 175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, telecom, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.
 ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current per device per diode Non-repetitive peak surge current per device per diode SYMBOL VRRM IF(AV) IFSM TEST CONDITIONS Tsolder pad = 155 °C TJ = 25 °C, 6 ms square pulse VALUES 200 16 8 190 100 UNITS V A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN.
Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 200 Forward voltage, per diode IF = 8 A VF IF ...


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