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WFF12N65S

Part Number	WFF12N65S
Manufacturer	Winsemi
Description	Power MOSFET
Published	Mar 27, 2017
Detailed Description	WFF12N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UI...
Datasheet	WFF12N65S PDF File

Overview

WFF12N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ.
Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction technology.
The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Absolute Maximum Ratings Symbol Parameter VDSS ID I DM Drain Source Voltage Continuous Drain Current(@Tc=25℃) Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Pulse Avalanche Current 1) EAR Repetit...

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