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RB088NS-40
Part Number
RB088NS-40
Manufacturer
ROHM
Description
Schottky Barrier Diode
Published
Mar 28, 2017
Detailed Description
RB088NS-40 Schottky Barrier Diode ●Outline VR 40 V Io 10 A IFSM 50 A ...
Datasheet
RB088NS-40
PDF File
Overview
RB088NS-40
Schottky
Barrier Diode ●Outline VR 40 V Io 10 A IFSM 50 A ●Features High reliability Power mold type Cathode common dual type Super Low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB088NS40 ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
5 45 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature VR Reverse direct voltage 40 V Io IFSM 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=130℃Max.
60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 10 50 A A Tj - 150 ℃ Storage temperature Tstg - -55 ~ 150 ℃ Attention www.
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com © 2018- ROHMCo.
, Ltd.
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1/6 2019/05/27_Rev.
003 RB088NS-40 Data sheet ●Electrical Characteristics Parameter Forward voltage(1) Reverse current(1) Note (1) Value per diode (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=5A IR VR=40V Min.
Typ.
Max.
Unit - - 0.
77 V - - 3 μA ●Thermal Characteristics Parameter Symbol Min.
Typ.
Max.
Unit Thermal Resistance (Junction to case)(1) (2) Per diode Per device RθJC - - 2.
4 ℃/W - 1.
5 ℃/W Thermal Resistance (Junction to ambient)(1) (3) Notes (1) Value is guaranteed by design.
RθJA - - 55 ℃/W (2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.
6mm FR4 board,single-sided copper,35μm thickness,reference footprint.
●Characteristic Curves www.
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com © 2018- ROHMCo.
, Ltd.
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