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RB228NS-40FH
Part Number
RB228NS-40FH
Manufacturer
ROHM
Description
Schottky Barrier Diode
Published
Mar 29, 2017
Detailed Description
RB228NS-40FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet ...
Datasheet
RB228NS-40FH
PDF File
Overview
RB228NS-40FH
Schottky
Barrier Diode (AEC-Q101 qualified) Data sheet ●Outline VR 40 V Io 30 A IFSM 100 A ●Features High reliability Power mold type Cathode common dual type Super Low IR ●Inner Circuit ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB228NS40 ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
5 45 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature VR Reverse direct voltage 40 V Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=100℃Max.
30 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 100 A Tj - 150 ℃ Storage temperature Tstg - -55 ~ 150 ℃ Attention www.
rohm.
com © 2018- ROHMCo.
, Ltd.
All rights reserved.
1/6 2019/05/27_Rev.
003 RB228NS-40FH Data sheet ●Electrical Characteristics Parameter Forward voltage(1) Reverse current(1) Note (1) Value per diode (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=15A IR VR=40V Min.
Typ.
Max.
Unit - - 0.
77 V - - 10 μA ●Thermal Characteristics Parameter Symbol Min.
Typ.
Max.
Unit Thermal Resistance (Junction to case)(1) (2) Per diode Per device RθJC - - 1.
0 ℃/W - 0.
61 ℃/W Thermal Resistance (Junction to ambient)(1) (3) Notes (1) Value is guaranteed by design.
RθJA - - 55 ℃/W (2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.
6mm FR4 board,single-sided copper,35μm thickness,reference footprint.
●Characteristic Curves ...
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