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HCTS20MS

Part Number	HCTS20MS
Manufacturer	Intersil
Description	Radiation Hardened Dual 4-Input NAND Gate
Published	Mar 30, 2017
Detailed Description	TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Features • 3 Micron Radiation Hardened SOS CMOS ...
Datasheet	HCTS20MS PDF File

Overview

TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.
5V to 5.
5V • LSTTL Input Compatibility - VIL = 0.
8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH Description The Intersil HCTS20MS is a Radiation Hardened D...

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HCTS20MS Radiation Hardened Dual 4-Input NAND Gate - Intersil

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