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V60D100C-M3

Vishay
Part Number V60D100C-M3
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 31, 2017
Detailed Description www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rec...
Datasheet PDF File V60D100C-M3 PDF File

V60D100C-M3
V60D100C-M3

Overview
www.
vishay.
com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM IFSM VF at IF = 30 A (TA = 125 °C) 100 V 320 A 0.
66 V TJ max.
150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 2...


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