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C3652

Part Number	C3652
Manufacturer	Hitachi Semiconductor
Description	2SC3652
Published	Apr 5, 2017
Detailed Description	2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. ...
Datasheet	C3652 PDF File

Overview

2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline TO-126 MOD 123 1.
Emitter 2.
Collector 3.
Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 30 20 3.
5 0.
3 0.
5 0.
8 5 150 –55 to +150 Unit V V V A A W W °C °C 2SC3652 Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 20 Collector cutoff current Emitter cutoff current DC current transfer...

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