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SM3116NAFP

Sinopower
Part Number SM3116NAFP
Manufacturer Sinopower
Description N-Channel MOSFET
Published Apr 8, 2017
Detailed Description SM3116NAF/SM3116NAFP ® N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/58A, RDS(ON)= 5.5mΩ (Max.) ...
Datasheet PDF File SM3116NAFP PDF File

SM3116NAFP
SM3116NAFP


Overview
SM3116NAF/SM3116NAFP ® N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/58A, RDS(ON)= 5.
5mΩ (Max.
) @ VGS=10V RDS(ON)= 7.
8mΩ (Max.
) @ VGS=4.
5V • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) • 100% UIS + Rg Tested S D G Top View of TO-220 S D G Top View of TO-220FP D Applications • Power Management in Desktop Computer or DC/DC Converters.
G Ordering and Marking Information S N-Channel MOSFET SM3116NA Assembly Material Handling Code Temperature Range Package Code Package Code F : TO-220 FP : TO-220FP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube (50ea/tube) Assembly Material G : Halogen and Lead Free Device SM3116NA F/FP : SM3116A XXXXX XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev.
A.
3 - March, 2015 1 www.
sinopowersemi.
com SM3116NAF/SM3116NAFP Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Cas...


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