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SM3005NAF

Sinopower
Part Number SM3005NAF
Manufacturer Sinopower
Description N-Channel MOSFET
Published Apr 9, 2017
Detailed Description SM3005NAF ® N-Channel Enhancement Mode MOSFET Features • 30V/110A, RDS(ON)= 3.9mΩ(max.) @ VGS=10V RDS(ON)= 5.2mΩ(ma...
Datasheet PDF File SM3005NAF PDF File

SM3005NAF
SM3005NAF

Overview
SM3005NAF ® N-Channel Enhancement Mode MOSFET Features • 30V/110A, RDS(ON)= 3.
9mΩ(max.
) @ VGS=10V RDS(ON)= 5.
2mΩ(max.
) @ VGS=4.
5V • 100% UIS + R Tested g • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Secondary Rectifier For SMPS.
Pin Description S GD Top View of TO-220 D G Ordering and Marking Information S N-Channel MOSFET SM3005NA Assembly Material Handling Code Temperature Range Package Code Package Code F : TO-220 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TU : Tube Assembly Material G : Halogen and Lead Free Device SM3005NA F : SM3005NA XXXXX XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev.
A.
5 - June, 2015 1 www.
sinopowersemi.
com SM3005NAF ® Absolute Maximum Ratings (T A = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VDSS VGSS Drain-Source Voltage Gate-Source Voltage 30 V ±20 TJ TSTG Maximum Junction Temperature Storage Temperature Range 150 -55 to 150 °C IS Diode Continuous Forward Current IDP b Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 32 200 110 a 70 100 40 A ...


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