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MT4435BDY

MOS-TECH
Part Number MT4435BDY
Manufacturer MOS-TECH
Description P-Channel Power MOSFET
Published Apr 10, 2017
Detailed Description Mos-Tech Semiconductor Co.,LTD. MT4435BDY P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high d...
Datasheet PDF File MT4435BDY PDF File

MT4435BDY
MT4435BDY

Overview
Mos-Tech Semiconductor Co.
,LTD.
MT4435BDY P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -8A 15@ VGS=-10V 20@ VGS=-4.
5V NOTE：The MT4435BDY is available in a lead-free package G ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 ℃ Symbol VDS VGS ID Limit -30 ±25 -8 - Pulse d b IDM -40 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -2.
4 2.
5 -...


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