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CEP110P03

CET
Part Number CEP110P03
Manufacturer CET
Description P-Channel MOSFET
Published Apr 10, 2017
Detailed Description CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =...
Datasheet PDF File CEP110P03 PDF File

CEP110P03
CEP110P03

Overview
CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.
5A, RDS(ON) =5.
8mΩ @VGS = -10V.
RDS(ON) =8.
5mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS -30 VGS ±20 -105.
5 ID -69 IDM -422 96 PD 0.
77 EAS IAS TJ,Tstg 612.
5 35 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
3 62.
5 ...


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