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CEM26138

CET
Part Number CEM26138
Manufacturer CET
Description Dual N-Channel MOSFET
Published Apr 10, 2017
Detailed Description CEM26138 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS...
Datasheet PDF File CEM26138 PDF File

CEM26138
CEM26138

Overview
CEM26138 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7.
6A, RDS(ON) = 22mΩ @VGS = 10V.
RDS(ON) = 33mΩ @VGS = 4.
5V.
20V, 6A, RDS(ON) = 27mΩ @VGS = 4.
5V.
RDS(ON) = 40mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
SO-8 1 D1 D1 D2 D2 876 5 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 7.
6 IDM 30 Channel 2 20 ±12 6 24 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W This is preliminary information on a new product in development now .
Details are subject to change wi...


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