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MDZ1N60

MagnaChip
Part Number MDZ1N60
Manufacturer MagnaChip
Description N-Channel Trench MOSFET
Published Apr 10, 2017
Detailed Description MDZ1N60 N-channel MOSFET 600V MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description The MDZ1N60 uses advanced...
Datasheet PDF File MDZ1N60 PDF File

MDZ1N60
MDZ1N60

Overview
MDZ1N60 N-channel MOSFET 600V MDZ1N60 N-Channel MOSFET 600V, 0.
4 A, 8.
5Ω General Description The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications.
Features  VDS = 600V  ID = 0.
4A  RDS(ON) ≤ 8.
5Ω @VGS = 10V @VGS = 10V Applications  Power supply  Battery charger  Ballast TO-92 GDS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Lead1) Thermal Resistance, Junction-to-Ambient TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 600 ±30 ...


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