DatasheetsPDF.com

MDF3N50

MagnaChip
Part Number MDF3N50
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Apr 10, 2017
Detailed Description MDF3N50 N-channel MOSFET 500V MDF3N50 N-Channel MOSFET 500V, 2.8 A, 2.5Ω General Description The MDF3N50 uses advanced...
Datasheet PDF File MDF3N50 PDF File

MDF3N50
MDF3N50



Overview
MDF3N50 N-channel MOSFET 500V MDF3N50 N-Channel MOSFET 500V, 2.
8 A, 2.
5Ω General Description The MDF3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF3N50 is suitable device for SMPS, HID and general purpose applications.
Features  VDS = 500V  ID = 2.
8A  RDS(ON) ≤ 2.
5Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  HID  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD dv/dt EAR EAS TJ, Tstg Rating 500 ±30 2.
8 1.
7 11.
2 30.
5 0.
24 4.
5 4.
5 170 -55~150 Unit V V A A A W W/ oC V/ns mJ mJ oC Symbol RθJA RθJC Rating 62.
5 4.
1 Unit oC/W Aug.
2021.
Version 1.
1 1 Magnachip Semiconductor Ltd.
MDF3N50 N-channel MOSFET 500V Ordering Information Part Number MDF3N50 Marking MDF3N50 Temp.
Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance gfs Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)