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SLB13N50C

Maple Semiconductor
Part Number SLB13N50C
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLB13N50C / SLI13N50C SLB13N50C / SLI13N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced us...
Datasheet PDF File SLB13N50C PDF File

SLB13N50C
SLB13N50C

Overview
SLB13N50C / SLI13N50C SLB13N50C / SLI13N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 13A, 500V, RDS(on) = 0.
48Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB13N50C / SLI13N50C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1...


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