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SLB7N65C

Maple Semiconductor
Part Number SLB7N65C
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLB7N65C / SLI7N65C SLB7N65C / SLI7N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using ...
Datasheet PDF File SLB7N65C PDF File

SLB7N65C
SLB7N65C

Overview
SLB7N65C / SLI7N65C SLB7N65C / SLI7N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 7.
0A, 650V, RDS(on) = 1.
2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin...


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