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SLB10N65C

Maple Semiconductor
Part Number SLB10N65C
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLB10N65C / SLI10N65C SLB10N65C / SLI10N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced us...
Datasheet PDF File SLB10N65C PDF File

SLB10N65C
SLB10N65C


Overview
SLB10N65C / SLI10N65C SLB10N65C / SLI10N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 10A, 650V, RDS(on) = 0.
95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage ...


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