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SLD4N70C

Maple Semiconductor
Part Number SLD4N70C
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLD4N70C / SLU4N70C SLD4N70C / SLU4N70C 700V N-Channel MOSFET General Description This Power MOSFET is produced using ...
Datasheet PDF File SLD4N70C PDF File

SLD4N70C
SLD4N70C

Overview
SLD4N70C / SLU4N70C SLD4N70C / SLU4N70C 700V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 3A, 700V, RDS(on)typ.
= 3.
0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N70C / SLU4N70C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga...


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