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SLD65R2K6SJ

Maple Semiconductor
Part Number SLD65R2K6SJ
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFE...
Datasheet PDF File SLD65R2K6SJ PDF File

SLD65R2K6SJ
SLD65R2K6SJ


Overview
SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Features - 2.
3A, 650V, RDS(on) typ.
= 2.
3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S ...



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