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SLP60R380SJ

Maple Semiconductor
Part Number SLP60R380SJ
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLP60R380SJ / SLF60R380SJ SLP60R380SJ / SLF60R380SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFE...
Datasheet PDF File SLP60R380SJ PDF File

SLP60R380SJ
SLP60R380SJ

Overview
SLP60R380SJ / SLF60R380SJ SLP60R380SJ / SLF60R380SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Features - 11A, 600V, RDS(on) typ.
= 0.
34Ω@VGS = 10 V - Low gate charge ( typical 33nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avala...


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