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DG8N65

DGME
Part Number DG8N65
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Apr 12, 2017
Detailed Description DG8N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG8N65N，， ，，，。 ，，。 DG8N65 is an N-channel enha...
Datasheet PDF File DG8N65 PDF File

DG8N65
DG8N65

Overview
DG8N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG8N65N，， ，，，。 ，，。 DG8N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 8 1.
4 16 V A Ω pF Symbol Package 1 /9 ABSOLUTE MAXIMUM ...


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