DatasheetsPDF.com

DG3N80

DGME
Part Number DG3N80
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Apr 12, 2017
Detailed Description DG3N80 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG3N80N，， ，，，。 ，，。 DG3N80 is an N-channel enha...
Datasheet PDF File DG3N80 PDF File

DG3N80
DG3N80

Overview
DG3N80 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG3N80N，， ，，，。 ，，。 DG3N80 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 800 3.
0 4.
8 12 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXIMU...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)