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BF910N60L

BYD
Part Number BF910N60L
Manufacturer BYD
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description BYD Microelectronics Co., Ltd. BF910N60/BF910N60L 600V N-Channel MOSFET General Description These N-Channel enhancemen...
Datasheet PDF File BF910N60L PDF File

BF910N60L
BF910N60L

Overview
BYD Microelectronics Co.
, Ltd.
BF910N60/BF910N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features z VDS =600 V z ID =10A z RDS(ON) =0.
65 Ω TYP(VGS=10V,ID=5.
0A) z Low CRSS (typical 16pF) z Fast switching Absolute Maximum Ratings...


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