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BF92N60

BYD
Part Number BF92N60
Manufacturer BYD
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description BYD Microelectronics Co., Ltd. BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET General Description These N-Ch...
Datasheet PDF File BF92N60 PDF File

BF92N60
BF92N60

Overview
BYD Microelectronics Co.
, Ltd.
BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features z VDS =600 V z ID =2A z RDS(ON) =3.
6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.
5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Voltage SinglePulseAvalanche Energy (Note2) Avalanche Current (Note1) RepetitiveAvalancheEnergy (Note1) PeakD...


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