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TSI7N80M

Truesemi
Part Number TSI7N80M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSB7N80M / TSI7N80M TSB7N80M / TSI7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using ...
Datasheet PDF File TSI7N80M PDF File

TSI7N80M
TSI7N80M

Overview
TSB7N80M / TSI7N80M TSB7N80M / TSI7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 7.
0A, 800V, RDS(on) = 1.
9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sing...


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