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TSI12N60M

Truesemi
Part Number TSI12N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSB12N60M / TSI12N60M TSB12N60M / TSI12N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced us...
Datasheet PDF File TSI12N60M PDF File

TSI12N60M
TSI12N60M

Overview
TSB12N60M / TSI12N60M TSB12N60M / TSI12N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 12A, 600V, RDS(on) = 0.
7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK ...


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