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TSK9N90M

Truesemi
Part Number TSK9N90M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSK9N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar strip...
Datasheet PDF File TSK9N90M PDF File

TSK9N90M
TSK9N90M


Overview
TSK9N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 9.
0A, 900V, RDS(on) = 1.
4 @VGS = 10 V • Low gate charge ( typical 45nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GD S TO-247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/...


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